Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...

Abstract: This paper presents a diagnostic and prognostic condition monitoring method for insulated-gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle applications. The ...

SemiQ Inc. has expanded its QSiC Dual3 family of half-bridge MOSFET modules, adding high-thermal-performance options with AlN substrates and pre-applied TIM (thermal interface material), as well as ...