Many electric vehicle (EV) power electronics systems use silicon carbide (SiC) and gallium nitride (GaN) devices. These ...

A novel SiC IPM based on repackaged TO-247 discrete devices achieves 98.1% efficiency and nearly 2x cost reduction. Silicon Carbide (SiC) semiconductor device-based power modules are widely used in ...

TEXT -608 -16 Left 2 !.param Vbus=800\n.param Lbus=10n\n.param Cbus=0.25u\n.param Rbus=1u\n.param Lld=250u\n.param Cld=10p\n.param Rld=1m\n \n.param Lg=10n\n.param Cg=1u\n.param Rg=20\n.param Lk=10n\n ...

Abstract: The parallel connection of Si IGBT/SiC MOSFETs is an important research topic to achieve the balance between cost and performance and to utilize the characteristics of each. In this study, ...

For a power electronics system that is to serve an application in the 2 MW range, the question arose as to which technology should be used and what service life would result. Dr. Martin Schulz, Global ...

Abstract: Three-level (3L) inverters have more power switches in a single current commutation loop (CCL) compared with the two-level (2L) ones, which results in larger parasitic inductance.

A double capacitor double diode double switch (DCDDDS) multilevel inverter is proposed in this paper to generate positive voltage and connect a polarity changing circuit of H-bridge inverter that ...

Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have ...