Abstract: “After HKMG, FinFETs are a powerful yet disruptive technology to enable continuous scaling following Moore's law. The disruptive nature arises from both the 3D structure and the quantization ...

The IEEE International Electron Devices Meeting (IEDM) is always a source of interesting information on the latest developments in solid-state technology and in particular solid state memory and ...

After nearly a decade and five major nodes, along with a slew of half-nodes, the semiconductor manufacturing industry will begin transitioning from finFETs to gate-all-around stacked nanosheet ...

While the comprehensive technical program for the 2021 IEEE International Electron Devices Meeting (IEDM) will be finalized in the fall, the popular IEDM Tutorials and Short Courses are already set.

Abstract: FinFET is the backbone device technology for CMOS electronics at deeply scaled technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to develop a new generation ...

Bipolar Junction Transistor (BJT) was invented in 1948 at Bell Telephone Laboratories. The bipolar in the name signifies the fact that both holes and electrons are used in this transistor for current ...

Several foundries are ramping up their new 5nm processes in the market, but now customers must decide whether to design their next chips around the current transistor type or move to a different one ...

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