Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB ...

This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.