Compoundsemiconductor.net7 小时
Turbocharging the GaN MOSFET with a HfO₂ gate
Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
PsyPost on MSN9 小时
AI models struggle with expert-level global history knowledge
Researchers recently evaluated the ability of advanced artificial intelligence (AI) models to answer questions about global ...