Abstract: Classical parallel plate capacitor (PPC) model, the most used analytical model for calculating the foil capacitance, does not account for the edge effect leading to sever underestimation of ...

Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.

Instituto de Física, Universidade de São Paulo, P.O. Box 66318, São Paulo, 05314-970, SP, Brazil, and Dipartimento di Fisica and C.N.I.S.M., Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 ...

Nickel ferrite (NiFe 2 O 4); XRD; FT-IR; SEM; TEM and Magnetic properties ...