IEEE

On the Capacitance of Nanosheet Transistors

Abstract: The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula.
IEEE

Haruo Kobayashi

Analog-to-digital Converter,Lookup Table,Most Significant Bit,Time-to-digital Converter,Arbitrary Waveform Generator,Asynchronous Successive Approximation Register,Binary Search,Digital Output,Dynamic ...