Electronics Weekly

LETI integrates III-V lasers on 200mm wafers using CMOS flow

Leti has integrated hybrid III-V silicon lasers on 200mm wafers using standard CMOS process flow. This shows the way to transitioning away from 100mm wafers and a process based on bulk III-V ...
Design-Reuse

X-FAB Partners With Akustica to Deliver World's First CMOS MEMS Single-Chip Microphones

X-FAB to Provide Foundry Services for Akustica's Family of CMOS MEMS Silicon Microphone Chips ERFURT, GERMANY and PITTSBURGH, PA -- May 31, 2006 -- Akustica, Inc., a pioneer in acoustic system-on-chip ...
Phys.org

Functional ring oscillators based on stacked gate-all-around silicon nanowire transistors

At this week's 2017 International Electron Devices Meeting (IEDM), imec, the research and innovation hub in nano-electronics and digital technology, reports on multiple key process optimizations for ...
Electronic Design

Simplified High-k/Metal-Gate Process Increases Planar CMOS Speed

IMEC, the Belgium-based nanotechnology research center, announced at this week's VLSI Symposium that it has improved the performance of its planar CMOS using hafnium-based, high-k dielectrics and ...