Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...

Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

TrendForce says that TSMC plans to repurpose its Hsinchu Fab 5, which handles GaN production, for advanced packaging.

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...