A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

(a) The percolation model for gate leakage of metal nanocrystals floating gate memory. (b) Schematic structure diagram of the floating gate memory based on discrete Pt nanocrystals/h-BN/MoS 2 van der ...

For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...