Semiconductor Engineering

How FinFET Device Performance Is Affected By Epitaxial Process Variations

As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
EDN

Synopsys and UMC Collaborate to Accelerate Development of UMC’s 14-nm FinFET Process

First collaboration milestone speeds validation of IP and design correlation on UMC's 14-nm FinFET process Process qualification vehicle validates key process and IP test structures Tapeout helps ...
Semiconductor Engineering

What’s After FinFETs?

Chipmakers are readying their next-generation technologies based on 10nm and/or 7nm finFETs, but it’s still not clear how long the finFET will last, how long the 10nm and 7nm nodes for high-end ...
Nature

Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond

The self-assembly of block copolymers (BCPs) can be used to create a versatile range of nanoscale structures 1,2,3, the placement of which can be precisely controlled using lithographically defined ...
Nasdaq

TSMC Certifies Synopsys' Digital and Custom Design Platforms on TSMC 5nm FinFET Process Technology

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...
EDN

All you need to know about GAA chip manufacturing process

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
Custom PC Review

GLOBALFOUNDRIES 7nm FinFET Process Will Provide 30% Performance Increase, Double Logic Density

GLOBALFOUNDRIES recently announced their upcoming 7nm FinFET manufacturing process which is expected to go into production in early 2018. According to the GLOBALFOUNDRIES, their new 7nm FinFET ...